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Physics MCQs | Objective Type Questions SET-10
1.Which of the following is the phenomenon responsible for the trade winds?
Answer: A [Convection]
Notes:
The trade-wind, which is the steady surface wind on the earth blowing in from north-east towards the equator, is an example of natural convection.
The trade-wind, which is the steady surface wind on the earth blowing in from north-east towards the equator, is an example of natural convection.
2.Which of the following is the efficiency of a Carnot engine(a = Temperature of source, b=Temperature of sink)?
Answer: A [1 – b/a]
Notes:
Carnot engine is a reversible engine operating between two temperatures T1 (source) and T2 (sink). The Carnot cycle consists of two isothermal processes connected by two adiabatic processes. The efficiency of a Carnot engine is given as: 1 – T2/T1
Carnot engine is a reversible engine operating between two temperatures T1 (source) and T2 (sink). The Carnot cycle consists of two isothermal processes connected by two adiabatic processes. The efficiency of a Carnot engine is given as: 1 – T2/T1
3.Which of these phenomenon is due to the scattering of light?
Answer: D [All of the above]
Notes:
Scattering of light causes the blue colour of sky and the reddening of the Sun at the sunrise and sunset.
Scattering of light causes the blue colour of sky and the reddening of the Sun at the sunrise and sunset.
4.Which of the following mirrors is commonly used as rear-view mirror in a vehicle?
Answer: B [Convex mirror]
Notes:
Convex mirrors are commonly used as rear-view (wing) mirrors in vehicles. Convex mirrors are preferred because they always give an erect, though diminished, image.
Convex mirrors are commonly used as rear-view (wing) mirrors in vehicles. Convex mirrors are preferred because they always give an erect, though diminished, image.
5.What is the value of permittivity of free space?
Answer: C [8.854 × 10–12 C2 N–1 m–2 ]
Notes:
The value of permittivity of free space (ε0) in SI units is 8.854 × 10–12 C2 N–1 m–2.
The value of permittivity of free space (ε0) in SI units is 8.854 × 10–12 C2 N–1 m–2.
6.Which of these is NOT a product of a fuel cell?
Answer: D [None of the above]
Notes:
The products of the reaction in the cell are water, electricity, and heat.
The products of the reaction in the cell are water, electricity, and heat.
7.When is a p-n diode said to be forward biased?
Answer: A [when p-side is connected to the positive terminal of the battery]
Notes:
When an external voltage V is applied across a semiconductor diode such that p-side is connected to the positive terminal of the battery and n- side to the negative terminal.
When an external voltage V is applied across a semiconductor diode such that p-side is connected to the positive terminal of the battery and n- side to the negative terminal.
8.What is the ratio of the change in collector current to the change in base current at a constant collector-emitter voltage, when the common emitter transistor is in active state, known as?
Answer: C [Current amplification factor]
Notes:
Current amplification factor β: This is defined as the ratio of the change in collector current to the change in base current at a constant collector-emitter voltage (VCE) when the transistor is in active state.
Current amplification factor β: This is defined as the ratio of the change in collector current to the change in base current at a constant collector-emitter voltage (VCE) when the transistor is in active state.
9.Which type of semiconductor do we get when pure silicon is doped with a group-3 element?
Answer: B [p-type semiconductor]
Notes:
If silicon (or germanium) is doped with a trivalent (three electrons in the outermost shell) atom like boron, aluminium, gallium or indium, three valence electrons form covalent bonds with three silicon atoms and deficiency of one electron is created. Such a semiconductor is said to be a p- type semiconductor.
If silicon (or germanium) is doped with a trivalent (three electrons in the outermost shell) atom like boron, aluminium, gallium or indium, three valence electrons form covalent bonds with three silicon atoms and deficiency of one electron is created. Such a semiconductor is said to be a p- type semiconductor.
10.What is the barrier potential for Germanium?
Answer: A [0.3 V]
Notes:
The barrier potential is characteristic of the semiconductor material. It is about 0.3 V for Germanium.
The barrier potential is characteristic of the semiconductor material. It is about 0.3 V for Germanium.